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MMBR901LT1 Datasheet

  • MMBR901LT1

  • NPN Silicon High-Frequency Transistor

  • 7頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high鈥揼ain, low鈥搉oise small鈥搒ignal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
鈥?/div>
High Current鈥揋ain 鈥?Bandwidth Product
鈥?/div>
Low Noise Figure @ f = 1.0 GHz 鈥?/div>
NF(matched) = 1.8 dB (Typ) (MRF9011LT1)
NF(matched)
= 1.9 dB (Typ) (MMBR901LT1, T3)
鈥?/div>
High Power Gain 鈥?/div>
Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
Gpe(matched)
= 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
鈥?/div>
Guaranteed RF Parameters (MRF9011LT1)
鈥?/div>
Surface Mounted SOT鈥?3 & SOT鈥?43 Offer Improved RF Performance
Lower Package Parasitics
High Gain
鈥?/div>
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
IC = 30 mA
SURFACE MOUNTED
HIGH鈥揊REQUENCY
TRANSISTOR
NPN SILICON
MMBR901LT1, T3
MRF9011LT1
CASE 318鈥?8, STYLE 6
SOT鈥?3
LOW PROFILE, MMBR901LT1, T3
CASE 318A鈥?5, STYLE 1
SOT鈥?43
LOW PROFILE, MRF9011LT1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Power Dissipation @ TC = 75擄C (1)
MMBR901LT1, T3;
MRF9011LT1
Derate above 25擄C
Storage Temperature Range
Maximum Junction Temperature
All
Tstg
TJ(max)
Characteristic
Storage Temperature
Thermal Resistance, Junction to Case
MRF9011LT1, MMBR901LT1, T3
Symbol
Tstg
R
胃JC
PD(max)
0.300
4.00
鈥?55 to +150
150
Watt
mW/擄C
擄C
擄C
Symbol
VCEO
VCBO
VEBO
IC
Value
15
25
2.0
30
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Max
150
200
Unit
擄C
擄C/W
DEVICE MARKING
MRF9011LT1 = 01
MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
REV 8
MOTOROLA RF
漏
Motorola, Inc. 1997
DEVICE DATA
MMBR901LT1, T3 MRF9011LT1
2鈥?

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