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MMBD452LT1 Datasheet

  • MMBD452LT1

  • DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES

  • 4頁

  • ONSEMI

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ON Semiconductort
Dual Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high鈥揺fficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low鈥揷ost, high鈥搗olume consumer
and industrial/commercial requirements.
MMBD452LT1
ON Semiconductor Preferred Devices
鈥?/div>
Extremely Low Minority Carrier Lifetime
鈥?/div>
Very Low Capacitance
鈥?/div>
Low Reverse Leakage
MAXIMUM RATINGS
(TJ = 125擄C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25擄C
Derate above 25擄C
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
VR
PF
225
1.8
TJ
鈥?5 to +125
Tstg
鈥?5 to +150
擄C
mW
mW/擄C
擄C
Value
30
Unit
Volts
30 VOLTS
DUAL HOT鈥揅ARRIER
DETECTOR AND SWITCHING
DIODES
3
1
2
CASE 318鈥?8, STYLE 11
SOT鈥?3 (TO鈥?36AB)
1
ANODE
2
CATHODE
3
CATHODE/ANODE
DEVICE MARKING
MMBD452LT1 = 5N
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (IR = 10
碌A(chǔ))
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
Symbol
V(BR)R
CT
IR
VF
VF
Min
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
0.9
13
0.38
0.52
Max
鈥?/div>
1.5
200
0.45
0.6
Unit
Volts
pF
nAdc
Vdc
Vdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 2
Publication Order Number:
MMBD452LT1/D

MMBD452LT1 產(chǎn)品屬性

  • ON Semiconductor

  • 肖特基（二極管與整流器）

  • Schottky Diodes

  • 30 V

  • Dual Series

  • 0.6 V at 0.01 A

  • 0.2 uA

  • - 55 C to + 125 C

  • SMD/SMT

  • SOT-23

  • Reel

  • 3000

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