鈥?/div>
Low Forward Voltage 鈥?0.5 Volts (Typ) @ IF = 10 mA
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MAXIMUM RATINGS
(EACH DIODE)
Rating
Continuous Reverse Voltage
Symbol
VR
Value
7.0
Unit
VCC
MMBD352LT1
CASE 318鈥?8, STYLE 11
SOT鈥?3 (TO鈥?36AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
qJA
PD
556
300
2.4
R
qJA
TJ, Tstg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
3
CATHODE
ANODE
1
2
ANODE
1
CATHODE
3
CATHODE/ANODE
2
ANODE
MMBD353LT1
CASE 318鈥?8, STYLE 19
SOT鈥?3 (TO鈥?36AB)
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
MMBD354LT1
CASE 318鈥?8, STYLE 9
SOT鈥?3 (TO鈥?36AB)
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
Reverse Voltage Leakage Current (Note 3.)
(VR = 3.0 V)
(VR = 7.0 V)
Capacitance
(VR = 0 V, f = 1.0 MHz)
VF
IR
鈥?/div>
鈥?/div>
C
鈥?/div>
0.25
10
1.0
pF
鈥?/div>
0.60
V
mA
ANODE
3
CATHODE
1
2
CATHODE
MMBD355LT1
CASE 318鈥?8, STYLE 12
SOT鈥?3 (TO鈥?36AB)
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. For each individual diode while the second diode is unbiased.
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 4
Publication Order Number:
MMBD352LT1/D
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