LESHAN RADIO COMPANY, LTD.
Dual Schottky Barrier Diode
MMBD352WT1
3
These devices are designed primarily for UHF mixer applications but are
suitable also for use in detector and ultra鈥揻ast switching circuits.
鈥?Very Low Capacitance 鈥?Less Than 1.0 pF @ Zero Volts
鈥?Low Forward Voltage 鈥?0.5 Volts (Typ) @ I
F
= 10 mA
1
2
CASE 419鈥?2 , STYLE 9
SOT鈥?23 / SC 鈥?70
1
ANODE
CATHODE
3
CATHODE/ANODE
2
MAXIMUM RATINGS
Rating
Symbol
V
R
Value
7.0
Unit
V
CC
Continuous Reverse Voltage
THERMAL CHARACTERISTICS
Characteristic
Symbol
P
D
Max
200
1.6
625
300
2.4
417
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
Total Device Dissipation FR鈥?5 Board
(1)
T
A
= 25擄C
Derate above 25擄
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
R
胃JA
P
D
R
胃JA
Junction and Storage Temperature
T
J
, T
stg
鈥?5 to +150
DEVICE MARKING
MMBD352WT1 = M5
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Forward Voltage
(I
F
= 10 mAdc)
Reverse Voltage Leakage Current
(V
R
= 3.0 V)
(V
R
= 7.0 V)
Capacitance
(V
R
= 0 V, f = 1.0 MHz)
1. FR鈥? = 1.0
脳
0.75
脳
0.062 in.
2. Alumina = 0.4
脳
0.3
脳
0.024 in. 99.5% alumina.
Symbol
V
F
I
R
鈥?/div>
鈥?/div>
鈥?/div>
Min
鈥?/div>
Max
0.60
Unit
V
碌A(chǔ)
C
0.25
10
1.0
pF
MMBD352WT1鈥?/2
1
2
