LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high鈥揺fficiency UHF and VHF
detector applications. Readily available to many other fast switching RF and digital
applications. They are housed in the SOT鈥?23/SC鈥?0 package which is designed for
low鈥損ower surface mount applications.
鈥?Extremely Low Minority Carrier Lifetime
鈥?Very Low Capacitance
鈥?Low Reverse Leakage
鈥?Available in 8 mm Tape and Reel
MMBD110T1
MMBD330T1
MMBD770T1
3
1
2
CASE 419鈥?2, STYLE 2
DEVICE MARKING
MMBD110T1 = 4M
MAXIMUM RATINGS
Rating
Reverse Voltage
SOT鈥?23 /SC 鈥?70
MMBD330T1 = 4T
MMBD770T1 = 5H
Symbol
V
R
Value
7.0
30
70
120
鈥?5 to +125
鈥?5 to +150 擄C
Typ
10
鈥?/div>
鈥?/div>
0.88
0.9
0.5
20
13
9.0
6.0
0.5
0.38
0.52
0.42
0.7
Unit
Vdc
MMBD110T1
MMBD330T1
MMBD770T1
Forward Power Dissipation
T
A
= 25擄C
Junction Temperature
Storage Temperature Range
P
F
T
J
T
stg
mW
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
V
(BR)R
(I
R
= 10
碌A(chǔ))
MMBD110T1
7.0
MMBD330T1
MMBD770T1
Diode Capacitance
(V
R
= 0, f = 1.0 MHZ, Note 1)
(V
R
= 15 Volts, f = 1.0 MHZ)
(V
R
= 20 Volts, f = 1.0 MHZ)
Reverse Leakage
(V
R
= 3.0 V)
(V
R
= 25 V)
(V
R
= 35 V)
Noise Figure
(f = 1.0 GHz, Note 2)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
C
T
MMBD110T1
MMBD330T1
MMBD770T1
I
R
MMBD110T1
MMBD330T1
MMBD770T1
NF
MMBD110T1
V
F
MMBD110T1
MMBD330T1
MMBD770T1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
30
70
Max
鈥?/div>
鈥?/div>
鈥?/div>
Unit
Volts
pF
1.0
1.5
1.0
nAdc
250
200
200
dB
鈥?/div>
Vdc
0.6
0.45
0.6
0.5
1.0
MMBD110. 330. 770T1鈥?/4
MMBD330T1 產(chǎn)品屬性
ON Semiconductor
肖特基（二極管與整流器）
Schottky Diodes
30 V
0.2 A
1 A
Single
0.6 V at 0.01 A
0.2 uA
- 55 C to + 125 C
SMD/SMT
SC-70
Reel
3000
MMBD330T1相關(guān)型號PDF文件下載
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