MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD2837LT1/D
Monolithic Dual Switching Diodes
ANODE
1
2
ANODE
MMBD2837LT1
MMBD2838LT1
3
CATHODE
3
1
MAXIMUM RATINGS (EACH DIODE)
Rating
Peak Reverse Voltage
D.C. Reverse Voltage
Peak Forward Current
Average Rectified Current
MMBD2837LT1
MMBD2838LT1
Symbol
VRM
VR
IFM
IO
Value
75
30
50
450
300
150
100
Unit
Vdc
Vdc
mAdc
mAdc
2
CASE 318 鈥?08, STYLE 9
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100
碌A(chǔ)dc)
Reverse Voltage Leakage Current
(VR = 30 Vdc)
(VR = 50 Vdc)
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage
(IF = 50 mAdc)
Forward Voltage
(IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4
0.3
MMBD2837LT1
MMBD2838LT1
MMBD2837LT1
MMBD2838LT1
CT
VF
V(BR)
IR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
4.0
1.0
1.0
1.2
4.0
pF
Vdc
35
75
鈥?/div>
鈥?/div>
Vdc
碌A(chǔ)dc
0.062 in.
0.024 in. 99.5% alumina.
trr
ns
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1997
1
MMBD2837LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
二極管，整流器 - 陣列
-
1.2V @ 100mA
100nA @ 30V
150mA
30V
4ns
標(biāo)準(zhǔn)
小信號 =
1 對共陰極
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBD2837LT1OSCT
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