LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diodes
CATHODE
ANODE
3
1
2
CATHODE
3
MMBD2835LT1
MMBD2836LT1
1
MAXIMUM RATINGS
Rating
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
Forward Current
I
F
Symbol
V
R
Value
35
75
100
Unit
Vdc
mAdc
CASE
2
318鈥?8, STYLE 12
SOT鈥?23 (TO鈥?36AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
胃
JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
R
胃
JA
P
D
DEVICE MARKING
MMBD2835LT1 = A3X;MMBD2836LT1=A2X
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)( EACH DIODE )
Characteristic
Symbol
V
(BR)
I
R
MMBD2835LT1
MMBD2836LT1
C
T
V
F
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
4.0
1.0
1.0
1.2
4.0
pF
Vdc
Min
35
75
Max
鈥?/div>
鈥?/div>
nAdc
Unit
Vdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
R
= 100
碌
Adc) MMBD2835LT1
MMBD2836LT1
Reverse Voltage Leakage Current
(V
R
= 30 Vdc)
(V
R
= 50 Vdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 100 mAdc)
Reverse Recovery Time(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0mAdc) (Figure 1)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
t
rr
ns
G20鈥?/2
MMBD2836LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
二極管，整流器 - 陣列
-
1.2V @ 100mA
100nA @ 50V
100mA（DC）
75V
4ns
標(biāo)準(zhǔn)
小信號(hào) =
1 對(duì)共陽極
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBD2836LT1OSCT
MMBD2836LT1相關(guān)型號(hào)PDF文件下載
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