Zowie Technology Corporation
Monolithic Dual Switching Diode
3
CATHODE
1
2
CATHODE
MMBD2835
1
2
ANODE
3
SOT-23
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Symbol
V
R
I
F
Value
35
100
Unit
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
MMBD2835=A3X
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Reverse Breakdown Voltage
( I
BR
=100 uAdc )
Forward Voltage
( I
F
=10 mAdc )
( I
F
=50 mAdc )
( I
F
=100 mAdc )
V
(BR)
35
-
-
-
-
1000
1000
1200
Vdc
V
F
mVdc
Reverse Voltage Leakage Current
(V
R
=20 Vdc )
I
R
-
-
0.1
uAdc
Diode Capacitance
( V
R
=0, f=1.0MH
Z
)
C
J
-
4.0
pF
Reverse Recovery Time
( I
F
=I
R
=10 mAdc, I
R
(REC=1.0mAdc, measured at I
R
=1.0mA R
L=
100
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
)
trr
-
4.0
nS
Zowie Technology Corporation
1
2
