MMBD1701/A / 1703/A / 1704/A / 1705/A
Discrete POWER & Signal
Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
CONNECTION DIAGRAMS
3
1
85
2
1701
3
3
1703
1
2 NC
3
1
3
2
2
1704
1705
SOT-23
1
MMBD1701
MMBD1703
MMBD1704
MMBD1705
MARKING
85
MMBD1701A
87
MMBD1703A
88
MMBD1704A
89
MMBD1705A
85A
87A
88A
89A
1
2
1
2
High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
TA = 25擄C unless otherwise noted
Parameter
Value
20
50
150
150
250
-55 to +150
150
Units
V
mA
mA
mA
mA
擄C
擄C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max
MMBD1701/A /1703/A-1705/A*
350
2.8
357
Units
mW
mW/擄C
擄C/W
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
漏1997
Fairchild Semiconductor Corporation
MMBD1700 Rev. B
1
2
3
