MMBD1401 / 1403 / 1404 / 1405
Discrete POWER & Signal
Technologies
MMBD1401 / 1403 / 1404 / 1405
3
1401
CONNECTION DIAGRAMS
3
3
1403
3
1
29
2
1
2 NC
3
1
3
2
1404
1405
2
SOT-23
1
MARKING
MMBD1401 29
MMBD1404
MMBD1403 32
MMBD1405
33
34
1
2
1
2
High Voltage General Purpose Diode
Sourced from Process 1H.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25擄C unless otherwise noted
Parameter
Value
175
200
600
700
1.0
2.0
-55 to +150
150
Units
V
mA
mA
mA
A
A
擄C
擄C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max
MMBD1401/1403/1404/1405*
350
2.8
357
Units
mW
mW/擄C
擄C/W
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
茫
1997 Fairchild Semiconductor Corporation