鈥?/div>
High Forward Conductance鈥?.5volts(typ)@I
F
=10mA
3
3
CATHODE
1
ANODE
1
2
CASE 318鈥?8, STYLE 6
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS
MBD101
Rating
Reverse Voltage
Forward Power Dissipation
@TA=25 擄C
Derate above 25 擄C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD101LT1=4M
symbol
v
R
p
F
280
2.2
T
J
T
stg
225
1.8
+150
鈥?5 to +150
mW
mW/ 擄C
擄C
擄C
MMBD101LT1
value
7.0
unit
Volts
ELECTRICAL CHARACTERISTICS(T
A
=25 擄C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
V
(BR)R
7.0
(I
R
= 10
碌
Adc)
Diode Capacitance
(V
R
= 0,f =1.0MHz,Note1)
Forward Voltage(1)
(I
F
= 10mAdc)
Reverse Leakage
(V
R
= 3.0Vdc)
C
T
V
F
I
R
鈥?/div>
鈥?/div>
鈥?/div>
Typ
10
0.88
0.5
0.02
Max
鈥?/div>
1.0
0.6
0.25
Unit
Volts
pF
Volts
碌
Adc
NOTE: MMBD101LT1
is also available in bulk packaging.Use
MMBD101L
as the device title to order this device in bulk.
G15鈥?/2
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