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MMB3904LT1 Datasheet

  • MMB3904LT1

  • General Purpose Transistor(NPN Silicon)

  • 6頁(yè)

  • LRC

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LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
NPN Silicon
3
COLLECTOR
MMBT3904LT1
3
1
BASE
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
V
V
CEO
CBO
EBO
2
EMITTER
1
2
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
R
胃JA
P
D
R
胃JA
T
J
, T
stg
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 10
碌A(chǔ)dc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
碌A(chǔ)dc,
I
C
= 0)
Base Cutoff Current
( V
CE
= 30 Vdc, V
EB
= 3.0 Vdc, )
Collector Cutoff Current
( V
CE
= 30Vdc, I
EB
= 3.0Vdc )
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
碌s,
Duty Cycle <2.0%.
I
BL
I
CEX
鈥?/div>
鈥?/div>
50
50
nAdc
nAdc
V
(BR)EBO
6.0
鈥?/div>
Vdc
V
(BR)CBO
60
鈥?/div>
Vdc
V
(BR)CEO
40
鈥?/div>
Vdc
O11鈥?/6

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