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MMA709 Datasheet

  • MMA709

  • 2 Watt InGaP HBT Amplifier

  • 624.11KB

  • 4頁(yè)

  • AEROFLEX

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MMA709
2 Watt InGaP HBT Amplifier
3030 OUTLINE
SOIC8 OUTLINE
Description:
The MMA709-3030 is a Power InGaP HBT device that is
designed to provide moderate power levels from 100 MHz
to 2.5 GHz. Best operation is obtained across narrow
bandwidths, typically 10%. The device is characterized
in Class A operation. The device is assembled in a low
pro鏗乴e plastic package that is a 3mm square DFN style
that has eight leads. The backside of the packages are
DC/RF/Thermal ground. The device is also available in
SOIC8 Package.
Features:
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鈥?/div>
鈥?/div>
鈥?/div>
High Output Power: +34 dBm (Typ)
High 3
rd
Order OIP3: +54 dBm (Typ)
High Dynamic Range: 97 dB (Typ)
3mm square DFN plastic package
RF Specifications:
Parameter
Gain
Output Power
3
rd
Order IP
Input VSWR
Noise Figure
Spur Free Dynamic Range
Thermal Resistance
NOTES:
Symbol
SSG
P
1dB
OIP3
NF
SFDR
JC
Condition
1, 2
1, 2
1, 2, 3
1, 2
1, 2
1960 MHz
MIN
TYP
MAX
MIN
21 MHz
40
TYP
MAX
Units
dB
dBm
dBm
10
+33
+52
1
1
+34
+55
2:1
6.5
6.5
9
+33
+50
9.5
+34
+53
1
3.5
2:1
6.5
95
102
1
2
7.0
dB
dB
擄C/W
95
2
102
1. All measurements from device evaluation boards.
2. V
S
= 7.00 V, I
CC
= 700 mA.
3. IP3: Power output per tone = +1
5dBm, separation = 1.22 MHz
Absolute Maximum Ratings:
Parameters
Operating temperature Range
Storage Temperature Range
Breakdown Voltage, Collector to Emitter
DC Collector Current
Operating Junction Temperature
Symbol
T
OP
T
STOR
BV
CEO
V
I
CC
T
J
Contact the factory when using other than 7 volts.
Minimum
-40
-54
1
4.5
Maximum
+85
+1
25
900
1
50
Unit
擄C
擄C
V
mA
擄C
Revision Date: 1
1/29/04

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