RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MM4150
1N4150 mini-MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
擄
C)
Items
Symbol
Ratings
Reverse Voltage
VR
50
Reverse Recovery
trr
4
Time
Power Dissipation
P
tot
500
Forward Current
Junction Temp.
Storage Temp.
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
M
ini MELF
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
m i n i -MEL F
Unit
V
ns
mW
mA
擄
C
擄
C
1.40
1.30
IF
Tj
Tstg
200
-65 to 200
-65 to 200
0.4
0.2
2 Places
3.40
3.20
Dimensions in millimeters
Electrical Characteristics (Ta=25
擄
C)
Ratings
Minimum Breakdown Voltage
@IR= 100uA
Peak Forward Surge Current
PW< 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
鈩?/div>
Maximum Thermal Resistance
Symbol
BV
IFsurge
VF
IR
Cj
trr
R
胃
JA
Ratings
75
500
1.0
100
4
4
0.35
Unit
V
mA
V
nA
pF
ns
擄
C/mW
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
1
