SHANGHAI SUNRISE ELECTRONICS CO., LTD.
MM4148
SURFACE MOUNT
SWITCHING DIODE
REVERSE VOLTAGE: 75V
FORWARD CURRENT: 150mA
FEATURES
鈥?Ideal for surface mount pick and
place application
鈥?Small glass structure ensures high reliability
鈥?Fast switching
鈥?Low leakage
鈥?High temperature soldering guaranteed:
o
250 C/10S/9.5mm lead length at 5 lbs tension
TECHNICAL
SPECIFICATION
MINI MELF
.063(1.6)
.055(1.4)
.020(0.5)
.012(0.3)
.020(0.5)
.012(0.3)
MECHANICAL DATA
鈥?Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
鈥?Case: Glass,hermetically sealed
鈥?Polarity: Color band denotes cathode
鈥?Mounting position: Any
0.146(3.7)
0.130(3.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Repetitive Forward Peak Current
Power Dissipation at T
a
=25
o
C
Forward Voltage (I
F
=10mA)
Reverse Current (V
R
=20V)
Reverse Current (V
R
=75V)
SYMBOL
V
R
V
RM
I
O
I
FRM
P
tot
V
F
I
R1
VALUE
75
100
150
300
500
1
25
5
50
4
4
0.35
2.5
0.45
-55 +175
UNITS
V
V
mA
mA
mW
V
nA
mA
mA
pF
nS
o
I
R2
Reverse Current (V
R
=20V,T
J
=100
o
C)
C
t
Capacitance
(note 1)
Reverse Recovery Time
(note 2)
trr
R
胃
(ja)
Thermal Resistance (Junction to ambient air)
V
fr
Voltage Rise
(note 3)
h
v
Rectification Efficiency
(note 4)
T
STG,
T
J
Operating Junction and Storage Temperature Range
Notes:
1. V
R
=0V, f=1 MHz
2. I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100W
3. When switching on tested with 50mA forward pulses tp=0.1as,Rise Time<30ns,fp=5 to 100KHz
4. f=100MHz,V
RF
=2V
C/mW
V
-
o
C
http://www.sse-diode.com
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