MM018-06L Datasheet

IC型號(hào)：
MM018-06L
PDF描述：
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRI...
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120.63KB
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3頁(yè)
芯片廠家：
MICROSEMI

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2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

Features

鈥?/div>

Available in Low Conduction Loss Class as MM118-xxL or Fast

Switching Class as MM118-xxF

鈥?/div>

Compact and rugged construction offering weight and space savings

鈥?/div>

Available with PC board solderable pins (see mechanical outline below)

or threaded terminals (add 鈥?suffix to part number, see option below)

T鈥?/div>

鈥?/div>

HPM (Hermetic Power Module)

鈥?/div>

Isolation voltage capability (in reference to the base) in excess of 3kV

鈥?/div>

Very low thermal resistance

鈥?/div>

Thermally matched construction provides excellent temperature and

power cycling capability

鈥?/div>

Additional voltage ratings or terminations available upon request

PART NUMBER

Collector-to-Emitter Breakdown Voltage (Gate shorted to

Emitter), @ T

鈮?/div>

25擄

Collector-to-Gate Breakdown Voltage @ T

鈮?/div>

25擄 R

= 1

M鈩?/div>

Gate-to-Emitter Voltage

continuous

transient

Continuous Collector Current

25擄

= 90擄

Peak Collector Current, pulsewidth limited by T

j max

Power Dissipation

Thermal resistance, junction to base

per switch

SYMBOL

CES

CGR

GES

GEM

C25

C90

R螛

, max

R螛 , typ

MM118-XX

SERIES

600 / 1200 Volts

150 Amps

3 PHASE N-CHANNEL

INSULATED GATE

BIPOLAR

TRANSISTOR (IGBT)

BRIDGE

MM118-06

600 V

+/- 20 V

+/- 30 V

60 A

32 A

120 A

165 W

0.75擄

C/W

0.5擄

C/W

MM118-12

1200 V

+/- 20 V

+/- 30 V

52 A

33 A

104 A

165 W

0.75擄

C/W

0.5擄

C/W

Maximum Ratings per switch @ 25擄 (unless otherwise specified)

Mechanical Outline

Datasheet# MSC0321A

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MM018-06L

英文版

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRI...

MICROSEMI

MM018-06L
MM018-06L

英文版

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRI...

MICROSEMI ...

MM018-06L

MM018-06L Datasheet

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