device with short circuit protection that can be directly interfaced to a microcontrol unit
(MCU). Ideal applications include automotive fuel injector driver, incandescent lamp
driver or other applications where a high in鈥搑ush current or a shorted load condition could
occur.
This logic level power MOSFET features current limiting for short circuit protection,
integrated Gate鈥揝ource clamping for ESD protection and integral Gate鈥揇rain clamping
for over鈥搗oltage protection and Sensefet technology for low on鈥搑esistance. No additional
gate series resistance is required when interfacing to the output of a MCU, but a 40 k鈩?/div>
gate pulldown resistor is recommended to avoid a floating gate condition.
The internal Gate鈥揝ource and Gate鈥揇rain clamps allow the device to be applied
without use of external transient suppression components. The Gate鈥揝ource clamp
protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The
Gate鈥揇rain clamp protects the MOSFET drain from the avalanche stress that occurs
with inductive loads. Their unique design provides voltage clamping that is essentially
independent of operating temperature.
The MLP2N06CL is fabricated using Motorola鈥檚 SMARTDISCRETES鈩?technology which
combines the advantages of a power MOSFET output device with the on鈥揷hip protective
circuitry that can be obtained from a standard MOSFET process. This approach offers an
economical means of providing protection to power MOSFETs from harsh automotive and
industrial environments. SMARTDISCRETES鈩?devices are specified over a wide tempera-
ture range from 鈥?0擄C to 150擄C.
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TC = 25擄C
Total Power Dissipation @ TC = 25擄C
Electrostatic Voltage
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
ID
PD
ESD
TJ, Tstg
Value
Clamped
Clamped
鹵10
Self鈥搇imited
40
2.0
鈥?0 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
kV
擄C
MLP2N06CL
Motorola Preferred Device
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.4 OHMS
D
R1
G
R2
S
G
D
S
THERMAL CHARACTERISTICS
Maximum Junction Temperature
Thermal Resistance 鈥?Junction to Case
Maximum Lead Temperature for Soldering Purposes,
1/8鈥?from case for 5 sec.
TJ(max)
R
胃JC
TL
150
3.12
260
擄C
擄C/W
擄C
CASE 221A鈥?6, Style 5
TO鈥?20AB
DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy
(Starting TJ = 25擄C, ID = 2.0 A, L = 40 mH)
SMARTDISCRETES is a trademark of Motorola, Inc.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
EAS
80
mJ
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
1
2
3
4
5
6
