MITSUBISHI LASER DIODES
ML9XX18 SERIES
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
TYPE
NAME
ML9XX18
FEATURES
DFB laser diode integrated with EA
(Electro-Absorption) modulator
10Gbps long-haul transmission over 50km
High side-mode-suppression-ratio (typical 40dB)
High extinction ratio
Wavelengths in range from 1530nm to 1564nm
are available for WDM application
DESCRIPTION
ML9XX18 series are DFB (Distributed Feedback) laser
diodes with a monolithcally integrated EA (Electro-Absorption) modulator
emitting light beam at 1550nm.
The laser is suitable to a light source for use in 10Gbps long-haul
transmission over 50km.
APPLICATION
10Gbps trunk-line systems
ABSOLUTE MAXIMUM RATINGS
Symbol
IF
VRL
VEA
Tc
Tstg
Parameter
Laser forward current
Laser reverse voltage
Modulator voltage
Case temperature
Storage temperature
Conditions
CW
-
-
-
-
Ratings
200
2
-3
+ 15 - +35
- 40 -+100
Unit
mA
V
V
deg.C
deg.C
ELECTRICAL/OPTICAL CHARACTERISTICS
(Tc=25deg.C)
Symbol
Ith
Iop
Vop
Wp
Parameter
Thereshold current
Operation current
Operating voltage
Peak wavelength
Beam divergence angle (parallel)
Beam divergence angle
(perpendicular)
Monitoring output
Cutoff frequency (-3dB)
Rise and fall time(10%-90%)
Side mode suppression ratio
Extinction Ratio
Power penalty
Test conditions
CW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=0V
CW,Po=5mW,Vmod=-1V
9.95328Gb/s,NRZ,PRBS2
23
-1
If=Iop
Vpp=0 - 2.5V
Min.
-
-
-
1530
-
-
-
10
-
35
10
Typ.
10
70
1.2
-
30
45
1.0
14
-
40
12
1.0
Max
30
100
2.0
1564
-
-
-
-
40
-
-
-
Unit
mA
mA
V
nm
deg.
deg.
mW
GHz
psec
dB
dB
dB
FFPh
FFPv
Pm
f
c
tr,tf
SMSR
Ex
Pp
ditto
SMF 50km (D=800ps/nm)
@BER = 10
-10
-
MITSUBISHI
ELECTRIC
MITSUBISHI
1
