MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE
NAME
ML725B16F
FEATURES
/4 phase shifted grating structure
Wide temperature range operation
(-20潞C to 85潞C )
High side-mode-suppression-ratio (typical 45dB)
High resonance frequency (typical 11GHz)
DESCRIPTION
ML7xx16 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1310nm.
/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML7xx16 can
operate in the wide temperature range form -20潞C to 85潞C without any
temperature control.
APPLICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
IF
VRL
IRD
VRD
Tc
Tstg
Parameter
Output power
Laser forward current
Laser reverse voltage
PD forward current
PD reverse voltage
Operation temperature
Storage temperature
2.5Gbps transmission
Conditions
CW
-
-
-
-
-
-
Ratings
6
200
2
2
20
-20 ~ +85
-40 ~+100
Unit
mW
mA
V
mA
V
潞C
潞C
ELECTRICAL/OPTICAL CHARACTERISTICS
Tc=25潞C
Symbol
Ith
Iop
Vop
Parameter
Threshold current
Operation current
Operating voltage
Slope efficiency
Peak wavelength
p
SMSR
Side mode suppression ratio
Beam divergence angle (parallel)
CW
CW,Tc=85潞C
CW,Po=5mW
CW,Po=5mW,Tc=85潞C
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW,Tc=-20潞C
CW,Po=5mW,Tc=-20潞C
CW,Po=5mW
+85潞C
+85潞C
Conditions
Limits
Min.
-
-
-
-
-
0.18
1290
35
-
-
-
-
0.1
-
-
MITSUBISHI
ELECTRIC
Typ.
10
35
30
75
1.1
0.25
1310
45
25
30
11
100
-
-
10
Max.
15
50
40
100
1.8
-
1330
-
40
47
-
150
2.0
1.0
20
Unit
mA
mA
mA
mA
V
mW/mA
nm
dB
deg.
deg.
GHz
psec
mA
A
pF
(perpendicular) CW,Po=5mW
fr
tr,tf
Im
Id
Ct
Resonance frequency
Rise and fall time(10%-90%)
Monitoring current (PD)
Dark current (PD)
Capacitance (PD)
2.48832Gbps, Ibias=Ith,Ipp=40mA
2.48832Gbps, Ibias=Ith,Ipp=40mA
not including package
CW,Po=5mW,VRD=1V
VRD=5V
VRD=5V,f=1MHz
1
2
