鈥?/div>
MQW * active layer
* : Multiple Quantum Well
ML6XX16 is a high power AlGaAs semiconductor laser which
provides a stable, single transverse mode oscillation with
emission wavelength of 785nm and standard light output of
30mW.
ML6XX16 is produced by the MOCVD crystal growth method
which is excellent in mass production and characteristics
uniformity. This is a high -performance, highly reliable, and
long life semiconductor laser.
Built-in monitor photodiode
APPLICATION
Optical disc drive ( rewritable , write once)
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Symbol
Po
VRL
VRD
IFD
Tc
Tstg
Parameter
Light output power
Reverse voltage (laser diode)
Reverse voltage (Photodiode)
Forward current (Photodiode)
Case temperature
Storage temperature
Conditions
CW
Pulse(Note 2)
-
-
-
-
-
Ratings
40
50
2
30
10
-40
~
+60
-55
~
+100
V
V
mA
Unit
mW
擄C
擄C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1ms
ELECTRICAL/OPTICAL CHARACTERISTICS
(Case temperature Tc=25擄C)
Symbol
Ith
Iop
畏
Vop
位p
胃//
胃鈯?/div>
Im
Im(Note 3)
ID
Ct
Parameter
Threshold current
Operation current
Slope efficiency
Operating voltage
Peak wavelength
Beam divergence angle
(parallel)
Beam divergence angle
(perpendicular)
Monitoring output current
(Photodiode)
Dark current (Photodiode)
Capacitance (Photodiode)
CW
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW
CW,Po=30mW,VRD=1V
RL=10鈩?(Note 4)
VRD=10V
VRD=5V
770
8
22
-
-
-
-
Test conditions
Min.
-
-
0.40
Typ.
30
80
0.55
2.0
785
10
25
0.2
0.5
-
7
Max
50
110
0.75
2.5
800
13
28
-
-
0.5
-
Unit
mA
mA
mW/mA
V
nm
擄
擄
mA
uA
pF
Note 3: Applicable to ML64116R
Note 4: RL=the load resistance of photodiode
MITSUBISHI
ELECTRIC
(1/2)
as of December '99
MITSUBISHI
1
2
