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MHVIC915NR2 Datasheet

  • MHVIC915NR2

  • RF LDMOS Wideband Integrated Power Amplifier

  • 16頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MHVIC915NR2
Rev. 9, 5/2006
RF LDMOS Wideband Integrated
Power Amplifier
The MHVIC915NR2 wideband integrated circuit is designed with on - chip
matching that makes it usable from 750 to 1000 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
鈥?/div>
Typical Single - Carrier N - CDMA Performance: V
DD
= 27 Volts, I
DQ1
=
80 mA, I
DQ2
= 120 mA, P
out
= 34 dBm, Full Frequency Band (746 to
960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Power Gain 鈥?31 dB
Power Added Efficiency 鈥?21%
ACPR @ 750 kHz Offset 鈥?- 50 dBc in 30 kHz Bandwidth
Driver Applications
鈥?/div>
Typical Single - Carrier N - CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 80
mA, I
DQ2
= 120 mA, P
out
= 23 dBm, Full Frequency Band (869 -
894 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain 鈥?31 dB
Power Added Efficiency 鈥?21%
ACPR @ 750 kHz Offset 鈥?- 60 dBc in 30 kHz Bandwidth
ACPR @ 1.98 MHz Offset 鈥?- 66 dBc in 30 kHz Bandwidth
鈥?/div>
Typical GSM Performance: V
DD
= 26 Volts, P
out
= 15 W P1dB, Full
Frequency Band (921 - 960 MHz)
Power Gain 鈥?30 dB @ P1dB
Power Added Efficiency = 56% @ P1dB
鈥?/div>
Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
On - Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)
鈥?/div>
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
鈥?/div>
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
鈥?/div>
Integrated ESD Protection
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MHVIC915NR2
746 - 960 MHz, 15 W, 27 V
SINGLE N - CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
PLASTIC
V
RD1
V
RG1
V
DS1
2 Stage IC
V
DS2
/RF
out
N.C.
V
RD1
V
RG1
V
DS1
GND
RF
in
V
GS1
V
GS2
Quiescent Current
Temperature Compensation
1
2
3
4
5
6
7
8
(Top View)
16
15
14
13
12
11
10
9
N.C.
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
V
DS2
/RF
out
N.C.
RF
in
V
GS1
V
GS2
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHVIC915NR2
1
RF Device Data
Freescale Semiconductor

MHVIC915NR2 產(chǎn)品屬性

  • 1,500

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 750MHz ~ 960MHz

  • 41.8dBm（15W）

  • 30dB

  • -

  • 手機，W-CDMA，IS-95，N-CDMA

  • 26V

  • 80mA

  • -

  • 16-SOP（0.276"，7.00mm 寬）

  • 帶卷 (TR)

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