鈭?/div>
6.75 GHz
(1)
0.6 +/-0.15
12.9 +/-0.2
(2)
(2)
R-1.6
11.3
2MIN
(3)
10.7
17.0 +/-0.2
APPLICATION
VSAT
VDS = 10 (V)
ID=1.2(A)
RG=100 (ohm)
1.6
RECOMMENDED BIAS CONDITIONS
4.5 +/-0.4
0.2
12.0
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
< Keep safety first in your circuit designs! >
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO
Gate to drain voltage
VGSO
Gate to source voltage
ID
Drain current
IGR
Revese gate current
IGF
Forward gate current
PT *1
Total power dissipation
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25deg.C
(Ta=25deg.C)
Ratings
-15
-15
3.75
-10
21
Unit
V
V
A
mA
mA
W
deg.C
deg.C
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
25
175
-65 / +175
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25deg.C)
Test conditions
Limits
Typ.
-
1
-
36.0
10.0
-
30
5
Unit
Max.
3.75
-4.5
-
-
1.8
-
6
A
S
V
dBm
dB
A
%
deg.C/W
IDSS
Saturated drain current
gm
Transconductance
VGS(off) Pinch-off voltage
P1dB
Output power at 1dB gain
GLP
Linear power gain
ID
Drain Current
P.A.E.
Power added efficiency
Rth(ch-c) Thermal resistance
*1 : Channel-case
VDS=3V,VGS=0V
VDS=3V,ID=1.1A
VDS=3V,ID=10mA
VDS=10V,ID(RF off)=1.2A. f=5.8
鈭?/div>
6.75GHz
*1
delta Vf method
Min.
-
-
-
35.0
8.5
-
-
-
MITSUBISHI
ELECTRIC
2.6 +/-0.2
0.1
MITSUBISHI
1
2
3
