鈥?/div>
omponents
21201 Itasca Street Chatsworth
!"#
$% !"#
MBR30020CT
THRU
MBR300100CT
300
Amp
Schottky Barrier
Rectifier
20
to 100 Volts
FULL PACK
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
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鈥?/div>
Operating Temperature: -65擄C to +150擄C
Storage Temperature: -65擄C to +150擄C
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
MCC
Part Number
MBR30020CT
MBR30030CT
MBR30035CT
MBR30040CT
MBR30045CT
MBR30060CT
MBR30080CT
MBR300100CT
Maximum
RMS Voltage
14V
21V
24.5V
28V
31.5V
42V
56V
70V
A
B
K
C
M
J
F
D
H
E
L
G
Electrical Characteristics @ 25擄C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
30020-30045CT
30060CT
30080-300100CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
300
A
2500A
T
L
=
140擄C
8.3ms, half sine
I
FM
=
150
A;
T
A
= 25擄C
DIM
A
B
C
E
F
G
H
J
K
L
L
DIMENSIONS
INCH
ES
MIN
MAX
3.150
NOM
1.565
1.585
.700
.800
.119
.132
1.375 REF
3.55
3.65
.590
.620
1/4 - UNF
.380
.410
.185
.195
.275
.295
MM
MIN
MAX
80.01
NOM
39.75
40.26
17.78
20.32
3.02
3.35
34.92 REF
90.17
92.71
14.99
15.75
FULL
9.65
10.41
4.70
4.95
6.99
7.49
NOTE
V
F
.63 V
.75 V
.84 V
I
R
8
mA
T
A
= 25擄C
鈭?/div>
鈭?/div>
鈭?/div>
C
J
300pF
Measured at
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300碌sec, Duty Cycle 1%
www.mccsemi.com
MBR300100CT PDF文件相關(guān)型號(hào)
MBR30020CT,MBR30035CT,MBR30040CT
MBR300100CT 產(chǎn)品屬性
GeneSiC Semiconductor
Schottky Diodes
100 V
300 A
2500 A
0.88 V
1 uA
- 40 C to + 175 C
SMD/SMT
Module
Bulk
25
MBR300100CT相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
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廠商
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