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MAZ9082H Datasheet

  • MAZ9082H

  • Panasonic Semiconductor [For surge absorption circuit]

  • PANASONIC

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ESD Diodes
MAZ9xxxH Series
Silicon planar type
Unit: mm
For surge absorption circuit
鈻?/div>
Features
鈥?/div>
Two elements anode-common type
鈥?/div>
Power dissipation P
D
: 200 mW
1
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
0.16
+0.10
鈥?.06
2
(0.65)
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
10藲
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Power dissipation
*
Junction temperature
Storage temperature
Symbol
P
D
T
j
T
stg
Rating
200
150
鈭?5
to
+150
Unit
mW
擄C
擄C
1.1
+0.2
鈥?.1
0 to 0.1
1.1
+0.3
鈥?.1
Note) *: P
D
= 200 mW achieved with a printed circuit board.
EIAJ: SC-59
1: Cathode 1
2: Cathode 2
3: Anode
Mini3-G1 Package
Internal Connection
3
1
2
鈻?/div>
Common Electrical Characteristics
T
a
=
25擄C
鹵 3擄C
Parameter
Zener voltage
*
Zener rise operating resistance
Zener operating resistance
Reverse current
Symbol
V
Z
R
ZK
R
Z
I
R
I
Z
I
Z
I
Z
V
R
Conditions
Specified value
Specified value
Specified value
Specified value
Refer to the list of the
electrical characteristics
within part numbers
Min
Typ
Max
Unit
V
鈩?/div>
鈩?/div>
碌A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage:
鹵10
kV
Test method: IEC1000-4-2 (C
=
150 pF, R
=
330
鈩?
Contact discharge: 10 times)
3. *: The temperature must be controlled 25擄C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25擄C)
V
Z
guaranted 20 ms after current flow.
0.4
鹵0.2
5藲
Publication date: March 2004
SKE00008CED
1

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