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M65608E Datasheet

  • M65608E

  • 128 K x 8 Very Low Power CMOS SRAM Rad Tolerant

  • Atmel   Atmel

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Features
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Operating Voltage: 5V
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Access Time: 30, 45 ns
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Very Low Power Consumption
鈥?Active: 250 mW (Typ)
鈥?Standby: 1 碌W (Typ)
鈥?Data Retention: 0.5 碌W (Typ)
Wide Temperature Range: -55擄C to +125擄C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
Asynchronous
Single 5V Supply
Equal Cycle and Access Time
Gated Inputs:
鈥?No Pull-up/down
鈥?Resistors Are Required
QML Q and V with SMD 5962-89598
ESCC B with Specification 9301/047
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
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Rad. Tolerant
128K x 8
Very Low Power
5V CMOS SRAM
M65608E
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 碌A(chǔ)) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
Rev. 4151I鈥揂ERO鈥?3/04
1

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