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M39208-10WNA1T Datasheet

  • M39208-10WNA1T

  • Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory

  • 30頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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M39208
Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
PRELIMINARY DATA
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPARATIONS
100ns ACCESS TIME
(Flash and EEPROM blocks)
WRITE, PROGRAM and ERASE STATUS BITS
CONCURRENT MODE (Read Flash while
writing to EEPROM)
100,000 ERASE/WRITE CYCLES
10 YEARS DATA RETENTION
LOW POWER CONSUMPTION
鈥?Stand-by mode: 60碌A(chǔ)
鈥?Automatic Stand-by mode
鈥?Deep Power Down mode
64 bytes ONE TIME PROGRAMMABLE
MEMORY
STANDARD EPROM/OTP MEMORY
PACKAGE
EXTENDED TEMPERATURE RANGES
DESCRIPTION
The M39208 is a memory device combining Flash
and EEPROM into a single chip and using single
supply voltage. The memory is mapped in two
blocks: 2 Mbit of Flash memory and 64 Kbit of
EEPROM memory. Each space is independant for
writing, in concurrent mode the Flash Memory can
be read while the EEPROM is being written.
Table 1. Signal Names
A0-A17
DQ0-DQ7
EE
EF
G
W
V
CC
V
SS
Address Inputs
Data Input / Outputs
TSOP32 (NA)
8 x 20 mm
TSOP32 (NB)
8 x 14 mm
Figure 1. Logic Diagram
VCC
18
A0-A17
W
EE
EF
G
M39208
8
DQ0-DQ7
EEPROM Block Enable
Flash Block Enable
Output Enable
Write Enable
Supply Voltage
Ground
VSS
AI02589
February 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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