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M29W640GH70ZA6E Datasheet

  • M29W640GH70ZA6E

  • 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory

  • 90頁

  • NUMONYX   NUMONYX

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M29W640GH M29W640GL
M29W640GT M29W640GB
64 Mbit (8Mb x8 or 4Mb x16, Page)
3V supply Flash memory
Feature
鈻?/div>
Supply Voltage
鈥?V
CC
= 2.7 to 3.6 V for Program/Erase/Read
鈥?V
PP
=12 V for Fast Program (optional)
Asynchronous Random/Page Read
鈥?Page Width: 4 words
鈥?Page Access: 25 ns
鈥?Random Access: 60 ns, 70 ns, 90 ns
Fast Program commands
鈥?2 word/4 byte Program (without V
PP
=12 V)
鈥?4 word/8 byte Program (with V
PP
=12 V)
鈥?16 word/32 byte Write Buffer
Programming time
鈥?10 碌s per byte/word typical
鈥?Chip Program time: 10 s (4-word Program)
Memory organization
鈥?M29W640GH/L:
128 main blocks, 64 Kbytes each
鈥?M29W640GT/B
Eight 8 Kbytes Boot blocks (top or bottom)
127 Main blocks, 64 Kbytes each
Program/Erase controller
鈥?Embedded byte/word program algorithms
Program/Erase Suspend and Resume
鈥?Read from any block during Program
Suspend
鈥?Read and Program another block during
Erase Suspend
ECOPACK
廬
packages
Device summary
Root Part Number
M29W640GH: Uniform, last block protected by V
PP
/WP
M29W640GL: Uniform, first block protected by V
PP
/WP
M29W640GT: Top Boot Blocks
M29W640GB: Bottom Boot Blocks
FBGA
鈻?/div>
TSOP48 (NA)
12 x 20mm
TFBGA48 (ZA)
6 x 8mm
FBGA
鈻?/div>
TSOP56 (NB)
)
14 x 20mm(1
TBGA64 (ZF)
10 x 13mm(1)
鈻?/div>
1. Packages only available upon request.
鈻?/div>
鈻?/div>
128 word Extended Memory block
鈥?Extra block used as security block or to
store additional information
Low power consumption:Standby and
Automatic Standby
Unlock Bypass Program command
鈥?Faster Production/Batch Programming
Common Flash Interface: 64-bit Security Code
V
PP
/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
100,000 Program/Erase cycles per block
Electronic Signature
鈥?Manufacturer Code: 0020h
鈥?Device code (see
Table 1)
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
Table 1.
Device code
227Eh + 220Ch + 2201h
227Eh + 220Ch + 2200h
227Eh + 2210h + 2201h
227Eh + 2210h + 2200h
March 2008
Rev 5
1/90
www.numonyx.com
1

M29W640GH70ZA6E 產(chǎn)品屬性

  • 1,122

  • 集成電路 (IC)

  • 存儲器

  • Axcell™

  • 閃存

  • 閃存 - 或非

  • 64M（8M x 8，4M x 16）

  • 70ns

  • 并聯(lián)

  • 2.7 V ~ 3.6 V

  • -40°C ~ 85°C

  • 48-TFBGA

  • 48-TFBGA（6x8）

  • 托盤

M29W640GH70ZA6E相關(guān)型號PDF文件下載

  • 型號
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  • 英文版
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  • 英文版
    1 Mbit 128Kb x8, Uniform Block Low Voltage Single Supply Fla...
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  • 英文版
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  • 英文版
    2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash ...
    STMICROELECTRONICS
  • 英文版
    2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash ...
    STMICROELECTRON...
  • 英文版
    4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Fla...
    STMICROELECTRONICS
  • 英文版
    4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Fla...
    STMICROELECTRON...
  • 英文版
    1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash ...
    STMICROELECTRONICS
  • 英文版
    1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash ...
    STMICROELECTRON...
  • 英文版
    16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Sup...
    STMICROELECTRONICS
  • 英文版
    16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
    STMICROELECTRON...
  • 英文版
    16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Sup...
    STMICROELECTRON...
  • 英文版
    2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single ...
    STMICROELECTRONICS
  • 英文版
    2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single ...
    STMICROELECTRON...
  • 英文版
    32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
    STMICROELECTRONICS
  • 英文版
    32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
    STMICROELECTRON...
  • 英文版
    4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single ...
    STMICROELECTRONICS
  • 英文版
    4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single ...
    STMICROELECTRON...

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