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M29W002BT

M29W002BB

2 Mbit (256Kb x8, Boot Block)

Low Voltage Single Supply Flash Memory

PRELIMINARY DATA

s

SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

ACCESS TIME: 55ns

PROGRAMMING TIME

鈥?10碌s by Byte typical

7 MEMORY BLOCKS

鈥?1 Boot Block (Top or Bottom Location)

鈥?2 Parameter and 4 Main Blocks

s

s

s

s

PROGRAM/ERASE CONTROLLER

鈥?Embedded Byte Program algorithm

鈥?Embedded Multi-Block/Chip Erase algorithm

鈥?Status Register Polling and Toggle Bits

鈥?Ready/Busy Output Pin

TSOP40 (N)

10 x 20mm

s

ERASE SUSPEND and RESUME MODES

鈥?Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

s

TEMPORARY BLOCK UNPROTECTION

MODE

UNLOCK BYPASS PROGRAM COMMAND

鈥?Faster Production/Batch Programming

LOW POWER CONSUMPTION

鈥?Standby and Automatic Standby

A0-A17

W

E

G

RP

M29W002BT

M29W002BB

RB

18

VCC

s

s

8

DQ0-DQ7

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

鈥?Defectivity below 1 ppm/year

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 20h

鈥?Top Device Code M29W002BT: 40h

鈥?Bottom Device Code M29W002BB: C2h

s

s

VSS

AI02955

March 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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• M29W022
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• M29W022
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• M29W102
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  16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Sup...
  
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• M29W160
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• M29W160
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• M29W200
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• M29W200
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• M29W400
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  4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single ...
  
  M29W400
• M29W400
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