M29F800DT
M29F800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
5V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE
鈥?V
CC
= 5V 鹵10% for Program, Erase and Read
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Figure 1. Packages
ACCESS TIME: 55, 70, 90ns
PROGRAMMING TIME
鈥?10碌s per Byte/Word typical
19 MEMORY BLOCKS
鈥?1 Boot Block (Top or Bottom Location)
鈥?2 Parameter and 16 Main Blocks
SO44 (M)
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PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
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UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
鈥?64 bit Security Code
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Top Device Code M29F800DT: 22ECh
鈥?Bottom Device Code M29F800DB: 2258h
TSOP48 (N)
12 x 20mm
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February 2003
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