M29DW640D90N1F Datasheet

IC型號(hào)：
M29DW640D90N1F
PDF描述：
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)...
文件大小：
948.07KB
PDF頁數(shù)：
56頁
芯片廠家：
STMICROELECTRONICS

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M29DW640D

64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

鈻?/div>

SUPPLY VOLTAGE

鈥?V

= 2.7V to 3.6V for Program, Erase

and Read

鈥?V

=12V for Fast Program (optional)

ASYNCHRONOUS PAGE READ MODE

鈥?Page Width 4 Words

鈥?Page Access 25, 30ns

鈥?Random Access 70, 90ns

PROGRAMMING TIME

鈥?10碌s per Byte/Word typical

鈥?4 Words / 8 Bytes at-a-time Program

MEMORY BLOCKS

鈥?Quadruple Bank Memory Array:

8Mbit+24Mbit+24Mbit+8Mbit

鈥?Parameter Blocks (at both Top and

Bottom)

DUAL OPERATIONS

鈥?While Program or Erase in a group of

banks (from 1 to 3), Read in any of the

other banks

PROGRAM/ ERASE SUSPEND and

RESUME MODES

鈥?Read from any Block during Program

Suspend

鈥?Read and Program another Block during

Erase Suspend

UNLOCK BYPASS PROGRAM COMMAND

鈥?Faster Production/Batch Programming

/WP PIN for FAST PROGRAM and

WRITE PROTECT

TEMPORARY BLOCK UNPROTECTION

MODE

COMMON FLASH INTERFACE

鈥?64 bit Security Code

EXTENDED MEMORY BLOCK

鈥?Extra block used as security block or to

store additional information

Figure 1. Packages

TSOP48 (N)

12 x 20mm

鈻?/div>

FBGA

TFBGA63 (ZA)

7 x 11mm

鈻?/div>

LOW POWER CONSUMPTION

鈥?Standby and Automatic Standby

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 0020h

鈥?Device Code: 227Eh + 2202h + 2201h

鈻?/div>

December 2004

1/56

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M29DW640D90N1F Datasheet

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