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M29DW640D90N1F Datasheet

  • M29DW640D90N1F

  • 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)...

  • 948.07KB

  • 56頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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M29DW640D
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
鈻?/div>
鈻?/div>
鈻?/div>
SUPPLY VOLTAGE
鈥?V
CC
= 2.7V to 3.6V for Program, Erase
and Read
鈥?V
PP
=12V for Fast Program (optional)
ASYNCHRONOUS PAGE READ MODE
鈥?Page Width 4 Words
鈥?Page Access 25, 30ns
鈥?Random Access 70, 90ns
PROGRAMMING TIME
鈥?10碌s per Byte/Word typical
鈥?4 Words / 8 Bytes at-a-time Program
MEMORY BLOCKS
鈥?Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
鈥?Parameter Blocks (at both Top and
Bottom)
DUAL OPERATIONS
鈥?While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
PROGRAM/ ERASE SUSPEND and
RESUME MODES
鈥?Read from any Block during Program
Suspend
鈥?Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
鈥?64 bit Security Code
EXTENDED MEMORY BLOCK
鈥?Extra block used as security block or to
store additional information
Figure 1. Packages
TSOP48 (N)
12 x 20mm
鈻?/div>
FBGA
TFBGA63 (ZA)
7 x 11mm
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Device Code: 227Eh + 2202h + 2201h
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
December 2004
1/56

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