鈻?/div>
Supply Voltage
鈥?V
CC
= 2.7V to 3.6V for Program, Erase and
Read
鈥?V
CCQ
= 1.65V to 3.6V for Input/Output
鈥?V
PP
=12V for Fast Program (optional)
ASYNCHRONOUS RANDOM/PAGE READ
鈥?Page Width: 8 Words
鈥?Page Access: 25, 30ns
鈥?Random Access: 60, 70ns
PROGRAMMING TIME
鈥?10碌s per Byte/Word typical
鈥?4 Words / 8 Bytes Program
鈥?32-Word Write Buffer
ERASE VERIFY
MEMORY BLOCKS
鈥?Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
鈥?Parameter Blocks (at Top and Bottom)
DUAL OPERATIONS
鈥?While Program or Erase in one bank, Read
in any of the other banks
PROGRAM/ ERASE SUSPEND and RESUME
MODES
鈥?Read from any Block during Program
Suspend
鈥?Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM
鈥?Faster Production/Batch Programming
COMMON FLASH INTERFACE
鈥?64 bit Security Code
100,000 PROGRAM/ERASE CYCLES per
BLOCK
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
鈻?/div>
TSOP56 (NF)
14 x 20mm
鈻?/div>
BGA
鈻?/div>
TBGA64 (ZA)
10 x 13mm
鈻?/div>
鈻?/div>
HARDWARE BLOCK PROTECTION
鈥?V
PP
/WP Pin for fast program and write
protect of the four outermost parameter
blocks
SECURITY FEATURES
鈥?Standard Protection
鈥?Password Protection
EXTENDED MEMORY BLOCK
鈥?Extra block used as security block or to
store additional information
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 0020h
鈥?Device Code: 227Eh + 2220h + 2200h
ECOPACK
廬
PACKAGES AVAILABLE
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
August 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev 1.0
1/93
www.st.com
1
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