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M29W160DT

M29W160DB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

s

SUPPLY VOLTAGE

鈥?V

CC

= 2.7V to 3.6V for Program, Erase and

Read

s

s

Figure 1. Packages

ACCESS TIME: 70, 90ns

PROGRAMMING TIME

鈥?10碌s per Byte/Word typical

35 MEMORY BLOCKS

鈥?1 Boot Block (Top or Bottom Location)

鈥?2 Parameter and 32 Main Blocks

SO44 (M)

s

s

PROGRAM/ERASE CONTROLLER

鈥?Embedded Byte/Word Program algorithms

ERASE SUSPEND and RESUME MODES

鈥?Read and Program another Block during

Erase Suspend

TSOP48 (N)

12 x 20mm

s

s

UNLOCK BYPASS PROGRAM COMMAND

鈥?Faster Production/Batch Programming

TEMPORARY BLOCK UNPROTECTION

MODE

COMMON FLASH INTERFACE (only

available for Temperature range 6: 鈥?0 to 85擄C)

鈥?64 bit Security Code

LOW POWER CONSUMPTION

鈥?Standby and Automatic Standby

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 0020h

鈥?Top Device Code M29W160DT: 22C4h

鈥?Bottom Device Code M29W160DB: 2249h

s

FBGA

s

TFBGA48 (ZA)

8 x 9mm

s

s

s

June 2002

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