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M29F100BT

M29F100BB

1 Mbit (128Kb x8 or 64Kb x16, Boot Block)

Single Supply Flash Memory

s

SINGLE 5V鹵10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

ACCESS TIME: 45ns

PROGRAMMING TIME

鈥?8碌s per Byte/Word typical

5 MEMORY BLOCKS

鈥?1 Boot Block (Top or Bottom Location)

鈥?2 Parameter and 2 Main Blocks

1

44

s

s

s

s

PROGRAM/ERASE CONTROLLER

鈥?Embedded Byte/Word Program algorithm

鈥?Embedded Multi-Block/Chip Erase algorithm

鈥?Status Register Polling and Toggle Bits

鈥?Ready/Busy Output Pin

TSOP48 (N)

12 x 20mm

SO44 (M)

s

ERASE SUSPEND and RESUME MODES

鈥?Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

s

UNLOCK BYPASS PROGRAM COMMAND

鈥?Faster Production/Batch Programming

TEMPORARY BLOCK UNPROTECTION

MODE

LOW POWER CONSUMPTION

鈥?Standby and Automatic Standby

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

鈥?Defectivity below 1 ppm/year

ELECTRONIC SIGNATURE

鈥?Manufacturer Code: 0020h

鈥?Top Device Code M29F100BT: 00D0h

鈥?Bottom Device Code M29F100BB: 00D1h

A0-A15

W

E

G

RP

VCC

s

16

15

DQ0-DQ14

DQ15A鈥?

M29F100BT

M29F100BB

BYTE

RB

s

s

s

s

VSS

AI02916

July 2000

1/22

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