M29F040B
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V
鹵
10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
鈥?8碌s per Byte typical
8 UNIFORM 64 Kbytes MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
鈥?Embedded Byte Program algorithm
鈥?Embedded Multi-Block/Chip Erase algorithm
鈥?Status Register Polling and Toggle Bits
PLCC32 (K)
TSOP32 (N)
8 x 20mm
s
s
s
s
s
ERASE SUSPEND and RESUME MODES
鈥?Read and Program another Block during
Erase Suspend
32
s
UNLOCK BYPASS PROGRAM COMMAND
鈥?Faster Production/Batch Programming
LOW POWER CONSUMPTION
鈥?Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
鈥?Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Device Code: E2h
A0-A18
19
1
PDIP32 (P)
s
s
Figure 1. Logic Diagram
s
s
VCC
8
DQ0-DQ7
W
E
G
M29F040B
VSS
AI02900
September 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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