M28W320CT
M28W320CB
32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory
PRELIMINARY DATA
s
SUPPLY VOLTAGE
鈥?V
DD
= 2.7V to 3.6V: for Program, Erase and
Read
鈥?V
DDQ
= 1.65V or 2.7V: Input/Output option
鈥?V
PP
= 12V: optional Supply Voltage for fast
Program
碌BGA
ACCESS TIME
鈥?2.7V to 3.6V: 90ns
鈥?2.7V to 3.6V: 100ns
TSOP48 (N)
12 x 20mm
碌BGA47
(GB)
8 x 6 solder balls
s
PROGRAMMING TIME:
鈥?10碌s typical
鈥?Double Word Programming Option
s
s
s
PROGRAM/ERASE CONTROLLER (P/E.C.)
COMMON FLASH INTERFACE
MEMORY BLOCKS
鈥?Parameter Blocks (Top or Bottom location)
鈥?Main Blocks
Figure 1. Logic Diagram
s
BLOCK PROTECTION UNPROTECTION
鈥?All Blocks protected at Power Up
鈥?Any combination of blocks can be protected
鈥?WP for block locking
21
A0-A20
W
E
G
RP
WP
M28W320CT
M28W320CB
VDD VDDQ VPP
16
DQ0-DQ15
s
SECURITY
鈥?64-bit user Programmable OTP cells
鈥?64-bit unique device identifier
鈥?One Parameter Block Permanently Lockable
s
s
s
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS of DATA RETENTION
鈥?Defectivity below 1ppm/year
s
VSS
AI03521
s
ELECTRONIC SIGNATURE
鈥?Manufacturer Code: 20h
鈥?Top Device Code, M28W320CT: 88BAh
鈥?Bottom Device Code, M28W320CB: 88BBh
May 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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