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M28F410

M28F420

4 Megabit (x8 or x16, Block Erase) FLASH MEMORY

PRELIMINARY DATA

DUAL x8 and x16 ORGANIZATION

SMALL SIZE PLASTIC PACKAGES TSOP56

and SO44

MEMORY ERASE in BLOCKS

鈥?One 16K Byte or 8K Word Boot Block (top or

bottom location) with hardware write and

erase protection

鈥?Two 8K Byte or 4K Word Key Parameter

Blocks

鈥?One 96K Byte or 48K Word Main Block

鈥?Three 128K Byte or 64K Word Main Blocks

5V

鹵

10% SUPPLY VOLTAGE

12V

鹵

5% PROGRAMMING VOLTAGE

100,000 PROGRAM/ERASE CYCLES

PROGRAM/ERASE CONTROLLER

AUTOMATIC STATIC MODE

LOW POWER CONSUMPTION

鈥?60渭A Typical in Standby

鈥?0.2渭A Typical in Deep Power Down

鈥?20/25mA Typical Operating Consumption

(Byte/Word)

HIGH SPEED ACCESS TIME: 70ns

EXTENDED TEMPERATURE RANGES

44

1

TSOP56 (N)

14 x 20mm

SO44 (M)

Figure 1. Logic Diagram

VCC

VPP

18

A0-A17

15

RP

DQ0-DQ14

M28F410

M28F420

BYTE

DQ15A-1

Table 1. Signal Names

A0-A17

DQ0-DQ7

DQ8-

DQ14

DQ15A-1

E

G

W

BYTE

RP

V

PP

V

CC

March 1995

Address Inputs

Data Input / Outputs

Data Input / Outputs

Data Input/Output or Address Input

Chip Enable

Output Enable

Write Enable

Byte/Word Organization

Reset/Power Down/Boot Block Unlock

Program & Erase Supply Voltage

Supply Voltage

W

E

G

VSS

AI01130C

1/38

This is preliminary infor mationon a new product now in developmen t or undergoing evaluation. Details are subject to change without notice.

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