M28F010
1024K (128K x 8) CMOS FLASH MEMORY
Y
Y
Y
Y
Y
Flash Electrical Chip-Erase
5 Second Typical
Quick-Pulse Programming Algorithm
10
ms
Typical Byte-Program
2 Second Typical Chip-Program
Single High Voltage for Writing and
Erasing
CMOS Low Power Consumption
30 mA Maximum Active Current
100
mA
Maximum Standby Current
Command Register Architecture for
Microprocessor Microcontroller
Compatible Write Interface
Noise Immunity Features
g
10% V
CC
Tolerance
Maximum Latch-Up Immunity
through EPI Processing
Y
Y
Y
Y
ETOX-III Flash-Memory Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
Compatible with JEDEC-Standard
Byte-Wide EPROM Pinouts
10 000 Program Erase Cycles Minimum
Available in Three Product Grades
QML
b
55 C to
a
125 C (T
C
)
SE2
b
40 C to
a
125 C (T
C
)
SE3
b
40 C to
a
110 C (T
C
)
Y
Intel鈥檚 M28F010 is a 1024-Kbit byte-wide in-system re-writable CMOS nonvolatile flash memory It is orga-
nized as 131 072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package The M28F010 is also
available in 32-contact leadless chip carrier J-lead and Flatpack surface mount packages It offers the most
cost-effective and reliable alternative for updatable nonvolatile memory The M28F010 adds electrical chip-
erasure and reprogramming to EPROM technology Memory contents of the M28F010 can be erased and
reprogrammed 1) in a socket 2) in a PROM programmer socket 3) on-board during subassembly test 4) in-
system during final test and 5) in-system after-sale
The M28F010 increases memory flexibility while contributing to time- and cost-savings It is targeted for
alterable code- data-storage applications where traditional EEPROM functionality (byte erasure) is either not
required or is not cost-effective Use of the M28F010 is also appropriate where EPROM ultraviolet erasure is
impractical or too time consuming
271111 鈥?1
Figure 1 M28F010 Block Diagram
January 1996
Order Number 271111-005