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M28F008 Datasheet

  • M28F008

  • 8 MBIT (1 MBIT x 8) FLASH MEMORY

  • 28頁(yè)

  • INTEL   INTEL

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M28F008
8 MBIT (1 MBIT x 8) FLASH MEMORY
Y
High-Density Symmetrically Blocked
Architecture
Sixteen 64 Kbyte Blocks
Extended Cycling Capability
10K Block Erase Cycles Minimum
160K Block Erase Cycles per Chip
Automated Byte Write and Block Erase
Command User Interface
Status Register
System Performance Enhancements
RY BY Status Output
Erase Suspend Capability
SRAM-Compatible Write Interface
Y
Very High-Performance Read
100 ns Maximum Access Time
Hardware Data Protection Feature
Erase Write Lockout during Power
Transitions
Industry Standard Packaging
40-Lead Sidebrazed DIP
42-Lead Flatpack
ETOX
TM
Nonvolatile Flash Technology
12V Byte Write Block Erase
Independent Software Vendor Support
Microsoft Flash File System (FFS)
Y
Y
Y
Y
Y
Y
Y
Y
Intel鈥檚 M28F008 8-Mbit FlashFile Memory is the highest density nonvolatile read write solution for solid state
storage The M28F008鈥檚 extended cycling symmetrically blocked architecture fast access time write automa-
tion and low power consumption provide a more reliable lower power lighter weight and higher performance
alternative to traditional rotating disk technology The M28F008 brings new capabilities to portable computing
Application and operating system software stored in resident flash memory arrays provide instant-on rapid
execute-in-place and protection from obsolescence through in-system software updates Resident software
also extends system battery life and increases reliability by reducing disk drive accesses
For high-density data acquisition applications the M28F008 offers a more cost-effective and reliable alterna-
tive to SRAM and battery Traditional high density embedded applications such as telecommunications can
take advantage of the M28F008鈥檚 nonvolatility blocking and minimal system code requirements for flexible
firmware and modular software designs
The M28F008 is offered in 40-lead sidebrazed DIP and 42-lead Flatpack packages This device uses an
integrated Command User Interface and state machine for simplified block erasure and byte write The
M28F008 memory map consists of 16 separately erasable 64 Kbyte blocks
Intel鈥檚 M28F008 employs advanced CMOS circuitry for systems requiring low power consumption and noise
immunity Its 100 ns access time provides superior performance when compared with magnetic storage media
A deep powerdown mode lowers power consumption to 500
mW
maximum thru V
CC
The RP power control
input also provides absolute data protection during system powerup down
Manufactured on Intel鈥檚 ETOX process technology the M28F008 provides the highest levels of quality reliabil-
ity and cost-effectiveness
Microsoft is a trademark of Microsoft Corporation
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel鈥檚 Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT
INTEL CORPORATION 1995
November 1994
Order Number 271232-004

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