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M28C16B Datasheet

  • M28C16B

  • 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection

  • 133.79KB

  • 17頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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M28C16B
M28C17B
16 Kbit (2K x 8) Parallel EEPROM
With Software Data Protection
PRELIMINARY DATA
s
s
Fast Access Time: 90 ns at V
CC
=5V
Single Supply Voltage:
鈥?4.5 V to 5.5 V for M28CxxB
鈥?2.7 V to 3.6 V for M28CxxB-W
s
s
Low Power Consumption
Fast BYTE and PAGE WRITE (up to 64 Bytes)
鈥?3 ms at V
CC
=4.5 V
鈥?5 ms at V
CC
=2.7 V
s
Enhanced Write Detection and Monitoring:
鈥?Data Polling
鈥?Toggle Bit
鈥?Page Load Timer Status
PLCC32 (K)
s
s
s
s
JEDEC Approved Bytewide Pin-Out
Software Data Protection
100000 Erase/Write Cycles (minimum)
Data Retention (minimum): 40 Years
DESCRIPTION
The M28C16B and M28C17B devices consist of
2048x8 bits of low power, parallel EEPROM, fabri-
cated with STMicroelectronics鈥?proprietary single
polysilicon CMOS technology. The devices offer
fast access time, with low power dissipation, and
require a single voltage supply.
Figure 1. Logic Diagram
VCC
Table 1. Signal Names
A0-A10
DQ0-DQ7
W
E
G
RB
V
CC
V
SS
Address Input
11
A0-A10
8
DQ0-DQ7
Data Input / Output
Write Enable
Chip Enable
Output Enable
Ready/Busy (M28C17B only)
Supply Voltage
Ground
W
E
G
M28C16B
M28C17B
RB
(M28C17B only)
VSS
AI02816
February 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/17

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