M25P10
1 Mbit Low Voltage Paged Flash Memory
With 20 MHz Serial SPI Bus Interface
PRELIMINARY DATA
s
s
s
s
s
s
s
s
s
s
s
s
s
1 Mbit PAGED Flash Memory
128 BYTE PAGE PROGRAM IN 3 ms TYPICAL
256 Kbit SECTOR ERASE IN 1 s TYPICAL
BULK ERASE IN 2 s TYPICAL
SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE
SPI BUS COMPATIBLE SERIAL INTERFACE
20 MHz CLOCK RATE AVAILABLE
SUPPORTS POSITIVE CLOCK SPI MODES
DEEP POWER DOWN MODE (1 碌A(chǔ) TYPICAL)
ELECTRONIC SIGNATURE
10,000 ERASE/PROG CYCLES PER SECTOR
20 YEARS DATA RETENTION
鈥?0 TO 85擄C TEMPERATURE RANGE
8
1
SO8 (MN)
150 mil width
8
1
SO8 (MW)
200 mil width
DESCRIPTION
The M25P10 is an 1 Mbit Paged Flash Memory
fabricated
with
STMicroelectronics
High
Endurance CMOS technology. The memory is
accessed by a simple SPI bus compatible serial
interface. The bus signals are a serial clock input
(C), a serial data input (D) and a serial data output
(Q).
The device connected to the bus is selected when
the chip select input (S) goes low. Data is clocked
in during the low to high transition of clock C, data
Figure 1. Logic Diagram
VCC
Table 1. Signal Names
C
D
Q
Serial Clock
Serial Data Input
Serial Data Output
Chip Select
D
C
S
W
HOLD
M25P10
Q
S
W
HOLD
V
CC
V
SS
Write Protect
Hold
Supply Voltage
Ground
VSS
AI03744
June 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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