MICRO
ELECTRONICS
M2012Y
HIGH BRIGHTNESS
AMBER
SURFACE LIGHTING
FEATURES:
GaAsP/GaP Amber Chip
Amber Diffused Lens
Low Power Requirements
Wide Viewing Angle
ABSOLUTE MAXIMUM RATINGS
Power dissipation/Chip
Continuous Forward Current/Chip
Peak Forward Current/Chip
(*Pulse Width = 1ms , Duty Ratio = 1/10)
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Solder Temperature (1/16 Inch from body)
Maximum Soldering Time(
鈮?/div>
260擄C)
(Ta=25擄C)
Pd
IF
*IFP
VR
Topr
Tstg
60mW
20mA
100mA
5V
-20 to +80擄C
-25 to +85擄C
260鈩?/div>
5 sec
ELECTRO-OPTICAL CHARACTERISTICS
PARAMETER
Forward Voltage/Chip
Reverse Current/Chip
Peak Wavelength
Dominant Wavelength
Spectral Line Half Width
Luminous Intensity
(Ta=25擄C)
MIN
TYP
2.1
589
590
35
5
15
MAX
UNIT
2.8
100
CONDITIONS
I
F
=20mA
V
R
=5V
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=10mA/Chip
16/5/2005
Sheet 1 of 2
SYMBOL
V
F
I
R
位p
位d
螖位
IV
V
渭A
nm
nm
nm
mcd
1
2
