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M14C16 Datasheet

  • M14C16

  • Memory Card IC 16/4 Kbit Serial IC Bus EEPROM

  • 13頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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M14C16
M14C04
Memory Card IC
16/4 Kbit Serial I虜C Bus EEPROM
s
Two Wire I
2
C Serial Interface
Supports 400 kHz Protocol
Single Supply Voltage (2.5 V to 5.5 V)
Hardware Write Control
BYTE and PAGE WRITE (up to 16 Bytes)
BYTE, RANDOM and SEQUENTIAL READ
Modes
2
2
s
s
s
s
2
2
s
s
s
s
s
s
Self-Timed Programming Cycle
Automatic Address Incrementing
Enhanced ESD/Latch-Up Behaviour
1 Million Erase/Write Cycles (minimum)
40 Year Data Retention (minimum)
5 ms Programming Time (typical)
Micromodule (D20)
DESCRIPTION
Each device is an electrically erasable program-
mable memory (EEPROM) fabricated with STMi-
croelectronics鈥檚
High
Endurance,
Single
Polysilicon, CMOS technology. This guarantees
an endurance typically well above one million
Erase/Write cycles, with a data retention of
40 years. The memory operates with a power sup-
ply as low as 2.5 V.
The M14C16 and M14C04 are each available in
wafer form (either sawn or unsawn) and in micro-
module form (on film).
Each memory is compatible with the I
2
C memory
standard. This is a two wire serial interface that
Table 1. Signal Names
SDA
Serial Data/Address Input/
Output
Serial Clock
Write Control
Supply Voltage
Ground
Wafer
Figure 1. Logic Diagram
VCC
SCL
WC
M14xxx
SDA
SCL
WC
V
CC
GND
GND
AI02217
March 1999
1/13

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