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M14256 Datasheet

  • M14256

  • Memory Card IC 256/128 Kbit Serial IC Bus EEPROM

  • 12頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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M14256
M14128
Memory Card IC
256/128 Kbit Serial I虜C Bus EEPROM
PRELIMINARY DATA
s
s
Compatible with I
2
C Extended Addressing
Two Wire I
2
C Serial Interface
Supports 400 kHz Protocol
Single Supply Voltage (2.5 V to 5.5 V)
Hardware Write Control
BYTE and PAGE WRITE (up to 64 Bytes)
BYTE, RANDOM and SEQUENTIAL READ
Modes
Self-Timed Programming Cycle
Automatic Address Incrementing
Enhanced ESD/Latch-Up Behaviour
100,000 Erase/Write Cycles (minimum)
40 Year Data Retention (minimum)
5 ms Programming Time (typical)
Micromodule (D22)
s
s
s
s
s
s
s
s
s
s
DESCRIPTION
Each device is an electrically erasable program-
mable memory (EEPROM) fabricated with STMi-
croelectronics鈥檚
High
Endurance,
Double
Polysilicon, CMOS technology. This guarantees
an endurance typically well above 100,000 Erase/
Write cycles, with a data retention of 40 years. The
memory operates with a power supply as low as
2.5 V.
The M14256 and M14128 are available in micro-
module form only. For availability of the M14256 or
Figure 1. Logic Diagram
VCC
Table 1. Signal Names
SDA
Serial Data/Address Input/
Output
Serial Clock
Write Control
Supply Voltage
Ground
SCL
WC
M14xxx
SDA
SCL
WC
V
CC
GND
GND
AI02217
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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