WTE
POWER SEMICONDUCTORS
M1 鈥?M7
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
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Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Power Loss
A
Built-in Strain Relief
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
SMA/DO-214AC
Dim
Min
Max
A
2.50
2.90
B
4.00
4.60
C
1.40
1.60
D
0.152
0.305
E
4.80
5.28
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
D
Mechanical Data
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Case: Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 100擄C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25擄C
@T
A
= 125擄C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
M1
@T
A
=25擄C unless otherwise specified
M2
M3
M4
M5
M6
M7
Unit
50
35
100
70
200
140
400
280
1.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
30
1.10
5.0
200
2.5
15
30
-65 to +175
A
V
碌A(chǔ)
碌S
pF
K/W
擄C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
M1 鈥?M7
1 of
3
漏
2002
Won-Top Electronics
1
2
3
