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LX5512ELQ Datasheet

  • LX5512ELQ

  • Wireless LAN Power Amplifier

  • 7頁

  • ETC

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LX5512E
I N T E G R A T E D
P R O D U C T S
InGaP HBT 2.4-2.5GHz Power Amplifier
P
RELIMINARY
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~50mA
Power Gain ~ 33 dB at
2.45GHz & Pout=18dBm
Total Current 120 mA for
Pout=18 dBm at 2.45 GHz
OFDM
EVM ~2 % for 64QAM/ 54Mbps
& Pout=18dBm
Small Footprint: 3x3mm
2
Low Profile: 0.9mm
APPLICATIONS/BENEFITS
The LX5512E is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a three-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching. The device
is manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD). It
operates at a single low voltage supply
of 3.3V with 33 dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 50 mA.
For 18dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
2 %, and consumes 120 mA total DC
current.
The LX5512E is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5512E an ideal
solution for broadband, high-gain power
amplifier requirements for IEEE
802.11b/g applications.
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
FCC U-N11 Wireless
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
T
J
(擄C)
0 to 70
LQ
16-Pin
Plastic MLPQ
LX5512E-LQ
Note: Available in Tape & Reel.
Append the letter 鈥淭鈥?to the part number.
(i.e. LX5512E-LQT)
LX5512E
LX5512E
Copyright
錚?/div>
2002
Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1

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