LX5512B
TM
廬
InGaP HBT 2.4 鈥?2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current I
CQ
~65mA
Power Gain ~ 32 dB at
2.45GHz & Pout=19dBm
Total Current ~140mA for
Pout=19dBm at 2.45 GHz
OFDM
EVM ~3 % for 64QAM/ 54Mbps
& Pout=19dBm
Small Footprint: 3x3mm2
Low Profile: 0.9mm
APPLICATIONS
The LX5512B is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range.
The PA is implemented as a three-
stage
monolithic
microwave
integrated circuit (MMIC) with active
bias and input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). It operates at a single
low voltage supply of 3.3V with 32
dB power gain between 2.4-2.5GHz,
at a low quiescent current of 65mA.
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3%, and consumes 140mA total DC
current.
The LX5512B is available in a 16-
pin 3mmx3mm micro-lead package
(MLP). The compact footprint, low
profile, and excellent thermal capability
of LX5512B meets the requirements of
high-gain power amplifiers for IEEE
802.11b/g applications.
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16 pin
LX5512BLQ
Note: Available in Tape & Reel. Append the letters 鈥淭R鈥?to the part number.
(i.e. LX5512BLQTR)
This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM)
testing. Appropriate ESD procedures should be observed when handling this device.
LX5512B
LX5512B
Copyright
漏
2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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