LX5506E
I N T E G R A T E D
P R O D U C T S
InGaP HBT 4 鈥?6GHz Power Amplifier
P
RELIMINARY
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
4.9-5.85GHz Operation
Single-Polarity 3.3V Supply
Total Current ~ 200mA for
Pout=19dBm at 5.25GHz
P1dB > +26dBm
Power Gain ~ 23dB at 5.25GHz
& Pout=19dBm
EVM ~ 3% for 64QAM/ 54Mbps
& Pout=19dBm
Integrated Power Detectors
On-Chip Input Match
Simple Output Match
Minimal External Components
Small Footprint: 3x3mm2
Low Profile: 0.9mm
APPLICATIONS/BENEFITS
The LX5506E is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.85
GHz frequency range. The PA is
implemented
as
a
three-stage
monolithic microwave integrated
circuit (MMIC) with active bias, on-
chip input matching and output pre-
matching. The device is manufactured
with an InGaP/GaAs Heterojunction
Bipolar Transistor (HBT) IC process
(MOCVD). It also has an integrated
differential output power detector pair
to help reduce BOM cost and PCB
board space for system implementation.
LX5506E is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506E an ideal
solution for broadband, high-gain
power amplifier requirements for IEEE
802.11a, and Hiperlan2 portable WLAN
applications.
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
FCC U-N11 Wireless
IEEE 802.11a
HiperLAN2
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
T
J
(擄C)
0 to 70
LQ
16-Pin
Plastic MLPQ
LX5506E-LQ
LX5506E
LX5506E
Note: Available in Tape & Reel.
Append the letter 鈥淭鈥?to the part number.
(i.e. LX5506E-LQT)
Copyright
錚?/div>
2000
Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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