PWRLITE LU1014D
High Performance N-Channel
P
OWERJFET
TM
with PN Diode
Features
Superior gate charge x Rdson product (FOM)
Trench Power JFET with low threshold voltage Vth.
Device fully 鈥淥N鈥?with Vgs = 0.7V
Optimum for 鈥淟ow Side鈥?Buck Converters
Excellent for high frequency dc/dc converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.
Applications
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
VRM Modules
IPAK Lead-free Pin Assignments
D
G
S
2 3
Case TO251 (IPAK)
1
N 鈥?Channel PowerJFET
with PN Diode
V
DS
(V)
24V
Product Summary
Rdson (鈩?
0.0065
I
D
(A)
50
1
Pin Definitions
Pin Number
1
2, 4
3
Pin Name
Gate
Drain
Source
Pin Function Description
Gate.
Transistor Gate
Drain.
Transistor Drain
Source.
Transistor Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25擄C
(V
DD
= 6V
DC
, IL=60A
PK
, L=0.3mH, R
G
=100
鈩?
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25擄C)
Symbol
V
DS
V
GS
V
GD
I
D
I
D
E
AS
T
J
T
STG
T
P
D
Ratings
24
-12
-28
50
1
100
200
-55 to 150擄C
-65 to 150擄C
260擄C
69
Units
V
V
V
A
A
mJ
擄C
擄C
擄C
W
LD1014D Rev 1.05 03-05
1
2
3
4
5
