NPN T-1 Standard
Phototransistor
LTR-4206/LTR-4206E
Features
Wide range of collector currents.
Lens for high sensitivity.
Low cost plastic package.
Package Dimensions
Description
The LTR-4206 series consist of a NPN silicon
phototransistor mounted in a lensed, clear plastic, end
looking package. The lensing effect of the package
allows an acceptance half angle of 10 measured from
the optical axis to the half power point. This series is
mechanically and spectrally matched to the LTE-4206
series of infrared emitting diodes. The LTR-4206E is a
special dark plastic package that cut the visible light
and suitable for the detectors of infrared application.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
Maximum Rating
100
30
5
-40
-55
260
to +85
to +100
for 5 Seconds
Unit
mW
V
V
Electrical Optical Characteristics at Ta=25
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Emitter Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
Symbol
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
Tr
Tf
I
CEO
I
C(ON)
Part No.
Min.
30
5
Typ.
Max.
Unit
V
V
Test
Condition
I
C
=1mA
Ee=0mW/cm
2
I
E
=100 A
Ee=0mW/cm
2
I
C
=100 A
Ee=1mW/cm
2
V
CC
=5V
I
C
=1mA
R
L
=1K
V
CE
=10V
Ee=0mW/cm
2
V
CE
=5V
Ee=1mW/cm
2
=940nm
0.4
10
15
100
LTR-4206
LTR-4206E
1
1
4
2
V
S
S
nA
mA
10-31
INFRARED
PRODUCTS
1
2
